Silicon Power Transistors DESCRIPTION TO-126 package current type

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Silicon Power Transistors DESCRIPTION TO-126 package current type

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Silicon Power Transistors
DESCRIPTION TO-126 package current type BD136/138/140 APPLICATIONS stages high-fidelity amplifiers television circuits
PINNING Emitter Collector;connected mounting base Base DESCRIPTION
BD135 BD137 BD139
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER BD135 VCBO Collector-base voltage BD137 BD139 BD135 VCEO Collector-emitter voltage BD137 BD139 VEBO Tstg Tamb Emitter -base voltage Collector current (DC) Collector current-Peak Base current-Peak Total power dissipation Junction temperature Storage temperature Operating ambient temperature Tmb670 Open collector Open base Open emitter CONDITIONS VALUE -65~150 -65~150 UNIT
THERMAL CHARACTERISTICS
SYMBOL j-mb PARAMETER Thermal resistance from junction ambient Thermal resistance from junction mounting base VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter voltage CONDITIONS IC=0.5A; IB=50mA IC=500mA VCE=2V VCB=30V; IE=0 ICBO Collector cut-off current VCB=30V; IE=0 Tj=125 IEBO hFE-1 hFE-2 hFE-3 Emitter cut-off current current gain current gain BD135-10;BD137-10;BD139-10 BD135-16;BD137-16;BD139-16 current gain Transition frequency VEB=5V; IC=0 IC=5mA VCE=2V IC=150mA VCE=2V IC=500mA VCE=2V
BD135 BD137 BD139
SYMBOL VCEsat
TYP.
UNIT
IC=50mA; VCE=5V ;f=100MHz
Silicon Power Transistors
PACKAGE OUTLINE
BD135 BD137 BD139
Fig.2 Outline dimensions

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