Silicon Power Transistors MJ15002 DESCRIPTION TO-3 package t
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Silicon Power Transistors
MJ15002
DESCRIPTION TO-3 package type MJ15001 safe operating area APPLICATIONS high power audio,disk head positioners other linear applications PINNING(see Fig.2)
Base Emitter Collector Fig.1 simplified outline (TO-3) symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(TC=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Emitter current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -140 -140 -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case 0.875 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS
MJ15002
SYMBOL
TYP.
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-0.2A ;IB=0 IC=-4A; IB=-0.4A IC=-4A VCE=-2V VCE=-140V; IB=0 VCE=-140V; VBE(off)=-1.5V TC=150 VEB=-5V; IC=0 IC=-4A VCE=-2V VCE=-40Vdc,t=1 Nonrepetitive
-140
VCE(sat) ICEO ICEX IEBO
Collector-emitter saturation voltage
-1.0
Base-emitter voltage
-2.0
Collector cut-off current
-0.25 -0.1 -2.0 -0.1
Collector cut-off current
Emitter cut-off current
current gain
Is/b
Second breakdown collector current With base forward biased VCE=-100Vdc,t=1 Nonrepetitive -0.5
Output capacitance
IE=0 VCB=-10V;f=1.0MHz IC=-0.5A VCE=-10V;f=0.5MHz
1000
Transition frequency
Silicon Power Transistors
PACKAGE OUTLINE
MJ15002
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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