Silicon Power Transistors MJ15001 DESCRIPTION TO-3 package t

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Silicon Power Transistors MJ15001 DESCRIPTION TO-3 package t

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Silicon Power Transistors
MJ15001
DESCRIPTION TO-3 package type MJ15002 area safe operation APPLICATIONS high power audio,disk head positioners other linear applications PINNING(see Fig.2)
Base Emitter Collector Fig.1 simplified outline (TO-3) symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(TC=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Emitter current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case 0.875 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Emitter cut-off current current gain CONDITIONS IC=0.2A ;IB=0 IC=4A; IB=0.4A IC=4A VCE=2V VCE=140V; IB=0 VCE=140V; VBE(off)=1.5V TC=150 VEB=5V; IC=0 IC=4A VCE=2V VCE=40Vdc,t=1s, Nonrepetitive Is/b Second breakdown collector current With base forward biased VCE=100Vdc,t=1s, Nonrepetitive Output capacitance Transition frequency IE=0 VCB=10V;f=1.0MHz IC=0.5A VCE=10V;f=0.5MHz
MJ15001
SYMBOL VCEO(SUS) VCE(sat) ICEO ICEX IEBO
TYP.
UNIT
0.25
1000
Silicon Power Transistors
PACKAGE OUTLINE
MJ15001
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

Silicon Power Transistors MJ15001 DESCRIPTION TO-3 package t

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