Silicon Power Transistors MJ10012 DESCRIPTION TO-3 package v

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Silicon Power Transistors MJ10012 DESCRIPTION TO-3 package v

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Silicon Power Transistors
MJ10012
DESCRIPTION TO-3 package voltage,high current APPLICATIONS ignition regulator control applications PINNING(see Fig.2)
Base Emitter Fig.1 simplified outline (TO-3) symbol Collector DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(TC=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance from junction case VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Emitter cut-off current current gain current gain current gain Diode forward voltage Storage time Fall time CONDITIONS IC=0.2A ;IB=0 IC=3A; IB=0.6A IC=6A; IB=0.6A IC=10A; IB=2A IC=6A; IB=0.6A IC=10A; IB=2A IC=10A VCE=6V VCB=600V; IE=0 VCE=400V; IB=0 VEB=6V; IC=0 IC=3A VCE=6V IC=6A VCE=6V IC=10A VCE=6V IF=10A
MJ10012
SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 ICBO ICEO IEBO hFE-1 hFE-2 hFE-3
TYP.
UNIT
2000
IC=6.0A VCC=12V IB1=IB2=0.3A
Silicon Power Transistors
PACKAGE OUTLINE
MJ10012
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

Silicon Power Transistors MJ10012 DESCRIPTION TO-3 package v

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