Silicon Power Transistors DESCRIPTION TO-3 package current gain t
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Silicon Power Transistors
DESCRIPTION TO-3 package current gain type MJ2500/2501 APPLICATIONS output devices complementary general purpose amplifier applications PINNING(see Fig.2)
Base Emitter Collector DESCRIPTION
MJ3000/3001
Fig.1 simplified outline (TO-3) symbol
ABSOLUTE MAXIMUM RATINGS(TC=25
SYMBOL PARAMETER MJ3000 VCBO Collector-base voltage MJ3001 MJ3000 VCEO Collector-emitter voltage MJ3001 VEBO Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -55~200 Open emitter CONDITIONS VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER MJ3000 IC=0.1A ;IB=0 MJ3001 IC=5A; IB=20mA IC=10A; IB=50mA IC=5A VCE=3V MJ3000 ICER Collector cut-off current MJ3001 MJ3000 ICEO Collector cut-off current MJ3001 IEBO Emitter cut-off current current gain VCE=40V; IB=0 VEB=5V; IC=0 IC=5A VCE=3V VCE=60V; RBE=1.0k? TC=150 VCE=80V; RBE=1.0k? TC=150 VCE=30V; IB=0 CONDITIONS
MJ3000/3001
SYMBOL
TYP.
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
VCE(sat)-1 VCE(sat)-2
Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage
1000
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case 1.17 UNIT
Silicon Power Transistors
PACKAGE OUTLINE
MJ3000/3001
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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