Silicon Power Transistors MJ2955A DESCRIPTION TO-3 package t
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Silicon Power Transistors
MJ2955A
DESCRIPTION TO-3 package type 2N3055A safe operating area APPLICATIONS high power audio ,stepping motor other linear applications solenoid drviers converters inverters PINNING(see Fig.2)
Base Emitter Collector Fig.1 simplified outline (TO-3) symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Tc=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -100 -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case 1.52 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Emitter cut-off current current gain current gain current gain Second breakdown collector current With base forward biased Output capacitance Transition frequency CONDITIONS IC=-0.2A ;IB=0 IC=-4A; IB=-0.4A IC=-10A; IB=-3.3A IC=-15A; IB=-7.0A IC=-4A VCE=-4V VCE=-30V; VBE(off)=0 VCE=Rated Value; VBE(off)=1.5V TC=150 VEB=-7V; IC=0 IC=-4A VCE=-2V IC=-4A VCE=-4V IC=-10A VCE=-4V VCE=-60Vdc,t=0.5 Nonrepetitive IE=0 VCB=-10V;f=1.0MHz IC=-1A VCE=-4V;f=1.0MHz 1.95 SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 ICEO ICEV IEBO hFE-1 hFE-2 hFE-3 Is/b
MJ2955A
TYP.
UNIT
-1.1 -3.0 -5.0 -1.8 -0.7 -5.0 -5.0
Silicon Power Transistors
PACKAGE OUTLINE
MJ2955A
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
Silicon Power Transistors
MJ2955A
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