Silicon Power Transistors DESCRIPTION TO-3 package current gain t
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Silicon Power Transistors
DESCRIPTION TO-3 package current gain type MJ3000/3001 APPLICATIONS output devices complementary general purpose amplifier applications PINNING(see Fig.2)
Base Emitter DESCRIPTION
MJ2500/2501
Fig.1 simplified outline (TO-3) symbol Collector
ABSOLUTE MAXIMUM RATINGS(TC=25
SYMBOL PARAMETER MJ2500 VCBO Collector-base voltage MJ2501 MJ2500 VCEO Collector-emitter voltage MJ2501 VEBO Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -0.2 -55~200 Open emitter CONDITIONS VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER MJ2500 IC=-0.1A ;IB=0 MJ2501 IC=-5A; IB=-20mA IC=-10A; IB=-50mA IC=-5A VCE=-3V MJ2500 ICER Collector cut-off current MJ2501 MJ2500 ICEO Collector cut-off current MJ2501 IEBO Emitter cut-off current current gain VCE=-40V; IB=0 VEB=-5V; IC=0 IC=-5A VCE=-3V VCE=-60V; RBE=1.0k? TC=150 VCE=-80V; RBE=1.0k? TC=150 VCE=-30V; IB=0 CONDITIONS
MJ2500/2501
SYMBOL
TYP.
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
-2.0 -4.0 -3.0
VCE(sat)-1 VCE(sat)-2
Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage
-1.0
-2.0 1000
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case 1.17 UNIT
Silicon Power Transistors
PACKAGE OUTLINE
MJ2500/2501
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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