Silicon Power Transistors MJ1000/1001 DESCRIPTION TO-3 packa
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Silicon Power Transistors
MJ1000/1001
DESCRIPTION TO-3 package current gain type MJ900/901 APPLICATIONS output devices complementary general purpose amplifier applications PINNING(see Fig.2)
Base Emitter Fig.1 simplified outline (TO-3) symbol Collector DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(TC=25
SYMBOL PARAMETER MJ1000 VCBO Collector-base voltage MJ1001 MJ1000 VCEO Collector-emitter voltage MJ1001 VEBO Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -55~200 Open emitter CONDITIONS VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER MJ1000 IC=0.1A ;IB=0 MJ1001 IC=3A; IB=12mA IC=8A; IB=40mA IC=3A VCE=3V MJ1000 ICER Collector cut-off current MJ1001 MJ1000 ICEO Collector cut-off current MJ1001 IEBO hFE-1 hFE-2 Emitter cut-off current current gain current gain VCE=40V; IB=0 VEB=5V; IC=0 IC=3A VCE=3V IC=4A VCE=3V VCE=60V; RBE=1.0k@ TC=150 VCE=80V; RBE=1.0k@ TC=150 VCE=30V; IB=0 CONDITIONS
MJ1000/1001
SYMBOL
TYP.
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
VCE(sat)-1 VCE(sat)-2
Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage
1000
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case 1.94 UNIT
Silicon Power Transistors
PACKAGE OUTLINE
MJ1000/1001
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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