Silicon Power Transistors DESCRIPTION TO-3 package voltage capabi
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Silicon Power Transistors
DESCRIPTION TO-3 package voltage capability switching speeds saturation voltage APPLICATIONS Designed high voltage switching applications such power supplies circuits width modulated regulators
PINNING (See Fig.2) Base Emitter Collector DESCRIPTION
2N6676 2N6677 2N6678
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER 2N6676 VCBO Collector-base voltage 2N6677 2N6678 2N6676 VCEO Collector-emitter voltage 2N6677 2N6678 VEBO Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature Tc=25 Open collector Open base Open emitter CONDITIONS VALUE -65~200 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N6676 VCEO(SUS) Collector-emitter sustaining voltage 2N6677 2N6678 VCEsat VBEsat ICEV IEBO hFE-1 Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain current gain Output capacitance Transition frequency IC=15A; IB=3A IC=15A; IB=3A IC=0.2A IB=0 SYMBOL
2N6676 2N6677 2N6678
CONDITIONS
TYP.
UNIT
VCE=RatedVCEV;VBE(off)=-1.5V TC=100 VEB=8V; IC=0 IC=1A VCE=5V IC=15A VCE=3V IE=0 ;VCB=10V;f=0.1MHz IC=1A VCE=10V;f=5.0MHz
Switching times Delay time Rise time Storage time Fall time IC=15A; IB1=-IB2=3.0A VCC=200V; tp=20µs; Duty CycleB2.0% VBB=6V,RL=1.35E
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance from junction case UNIT
Silicon Power Transistors
PACKAGE OUTLINE
2N6676 2N6677 2N6678
Fig.2 Outline dimensions
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