Silicon Power Transistors DESCRIPTION TO-3 package voltage,high s

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Silicon Power Transistors DESCRIPTION TO-3 package voltage,high s

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Silicon Power Transistors
DESCRIPTION TO-3 package voltage,high speed APPLICATIONS regulators relay drivers circuits
PINNING Base Emitter Collector DESCRIPTION
2N6674 2N6675
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER 2N6674 VCBO Collector-base voltage 2N6675 2N6674 VCEO Collector-emitter voltage 2N6675 VEBO Emitter-base voltage Collector current Base current Ta=25 Total Power Dissipation TC=25 Tstg Junction temperature Storage temperature -65~200 Open collector Open base Open emitter CONDITIONS VALUE UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE UNIT
Silicon Power Transistors
2N6674 2N6675
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N6674 VCEO(SUS) Collector-emitter sustaining voltage 2N6675 VCEsat-1 VCEsat-2 VBEsat Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2N6674 ICBO Collector cut-off current 2N6675 IEBO hFE-1 hFE-2 Emitter cut-off current current gain current gain Transition frequency VCB=650V; IE=0 VEB=7V; IC=0 IC=1A VCE=3V IC=10A VCE=2V IC=0.5A VCE=10V;f=1MHz IC=10A; IB=2A IC=15A; IB=5A IC=10A; IB=2A VCB=450V; IE=0 IC=0.2A ;IB=0 CONDITIONS TYP. UNIT
SYMBOL
Silicon Power Transistors
PACKAGE OUTLINE
2N6674 2N6675
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)

Silicon Power Transistors DESCRIPTION TO-3 package voltage,high s

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