Silicon Power Transistors DESCRIPTION TO-3 package saturation vol
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Silicon Power Transistors
DESCRIPTION TO-3 package saturation voltage switching speed voltage ratings APPLICATIONS power supplies inverters regulators
PINNING Base Emitter Collector DESCRIPTION
2N6671 2N6672 2N6673
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER 2N6671 VCBO Collector-base voltage 2N6672 2N6673 2N6671 VCEO Collector-emitter voltage 2N6672 2N6673 VEBO Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -65~200 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N6671 VCEO(SUS) Collector-emitter sustaining voltage 2N6672 2N6673 VCEsat-1 VCEsat-2 VBEsat Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2N6671 ICEV Collector cut-off current 2N6672 2N6673 IEBO Emitter cut-off current current gain Output capacitance Transition frequency IC=5A; IB=1A IC=8A ;IB=4A IC=5A; IB=1A IC=0.2A ;IB=0 SYMBOL
2N6671 2N6672 2N6673
CONDITIONS
TYP.
UNIT
VCE=450V; VBE(off)=-1.5V VCE=550V; VBE(off)=-1.5V VCE=650V; VBE(off)=-1.5V VEB=8V; IC=0 IC=5A VCE=3V IE=0 VCB=10V;f=0.1MHz IC=0.2A VCE=10V
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 1.17 UNIT
Silicon Power Transistors
PACKAGE OUTLINE
2N6671 2N6672 2N6673
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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