Silicon Power Transistors DESCRIPTION TO-3 package current gain A
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Silicon Power Transistors
DESCRIPTION TO-3 package current gain APPLICATIONS switching amplifiers drivers shunt regulators
PINNING Base Emitter Collector DESCRIPTION
2N6576 2N6577 2N6578
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER 2N6576 VCBO Collector-base voltage 2N6577 2N6578 2N6576 VCEO Collector-emitter voltage 2N6577 2N6578 VEBO Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 0.25 -65~200 UNIT
Silicon Power Transistors
2N6576 2N6577 2N6578
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N6576 VCEO(SUS) Collector-emitter sustaining voltage 2N6577 2N6578 VCEsat-1 VCEsat-2 sat-1 sat-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage 2N6576 ICEO Collector cut-off current 2N6577 2N6578 2N6576 ICBO Collector cut-off current 2N6577 2N6578 IEBO hFE-1 hFE-2 hFE-3 hFE-4 Emitter cut-off current current gain current gain current gain current gain Diode forward voltage IC=10A; IB=100mA IC=15A ;IB=150mA IC=10A; IB=100mA IC=15A ;IB=150mA VCE=60V; IB=0 VCE=90V; IB=0 VCE=120V; IB=0 VCB=60V; IE=0 VCB=90V; IE=0 VCB=120V; IE=0 VEB=7V; IC=0 IC=0.4A VCE=3V IC=4A VCE=3V IC=10A VCE=3V IC=15A VCE=4V IF=15A 2000 20000 5000 IC=0.2A ;IB=0 CONDITIONS TYP. UNIT SYMBOL
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 1.46 UNIT
Silicon Power Transistors
PACKAGE OUTLINE
2N6576 2N6577 2N6578
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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