Silicon Power Transistors DESCRIPTION TO-3 package current gain s
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Silicon Power Transistors
DESCRIPTION TO-3 package current gain switching times collector saturation voltage type 2N6338~2N6341 APPLICATIONS industrial-military power amplifier switching circuit applications
PINNING(see Fig.2) Base Emitter Collector DESCRIPTION
2N6436 2N6437 2N6438
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER 2N6436 VCBO Collector-base voltage 2N6437 2N6438 2N6436 VCEO Collector-emitter voltage 2N6437 2N6438 VEBO Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -100 -120 -140 -100 -120 -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 0.875 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N6436 V(SUS)CEO Collector-emitter sustaining voltage 2N6437 2N6438 VCEsat-1 VCEsat-2 sat-1 sat-2 ICEX ICBO Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current 2N6436 ICEO Collector cut-off current 2N6437 2N6438 IEBO hFE-1 hFE-2 hFE-3 Emitter cut-off current current gain current gain current gain Output capacitance Transition frequency IC=-10A; IB=-1.0A IC=-25A; IB=-2.5A IC=-10A; IB=-1.0A IC=-25A; IB=-2.5A IC=-50mA ;IB=0
2N6436 2N6437 2N6438
SYMBOL
CONDITIONS
-100 -120
TYP.
UNIT
-1.0 -1.8 -1.8 -2.5 -1.0
VCE=Rated VCEO; VEB=-1.5V TC=150 VCB=Rated VCB; IE=0 VCE= -40V,IB=0 VCE=- 50V,IB=0 VCE= -60V,IB=0 VEB=-6V; IC=0 IC=-0.5A VCE=-2V IC=-10A VCE=-2V IC=-25A VCE=-2V IE=0 VCB=-10V;f=1MHz IC=-1A VCE=-10V;f=10MHz
-100
Silicon Power Transistors
PACKAGE OUTLINE
2N6436 2N6437 2N6438
Fig.2 outline dimensions
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