Silicon Power Transistors DESCRIPTION TO-66 package collector cur

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Silicon Power Transistors DESCRIPTION TO-66 package collector cur

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Silicon Power Transistors
DESCRIPTION TO-66 package collector current-IC=-1A dissipation -PD=35W @TC=25 type 2N3583 APPLICATIONS speed switching linear amplifier operational amplifiers regulators ,converters stages high fidelity amplifers
PINNING (See Fig.2) Base Emitter Collector DESCRIPTION
2N6420
Fig.1 simplified outline (TO-66) symbol
Absolute maximum ratings(Ta=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -250 -175 -1.0 -5.0 -1.0 -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base -emitter voltage Collector cut-off current Collector cut-off current Emitter cut-off current current gain current gain current gain CONDITIONS IC=-50mA IB=0 IC=-1A; IB=-0.125A IC=-1A VCE=-10V VCE=-225V;VBE(off)=-1.5V TC=150 VCE=-150V ;IB=0 VEB=-6V; IC=0 IC=-0.1A VCE=-10V IC=-0.5A VCE=-10V IC=-1A VCE=-10V -175
2N6420
SYMBOL VCEO(SUS) VCEsat ICEX ICEO IEBO hFE-1 hFE-2 hFE-3
TYP.
UNIT
-5.0 -1.4 -1.0 -3.0 -5.0
Silicon Power Transistors
PACKAGE OUTLINE
2N6420
Fig.2 Outline dimensions

Silicon Power Transistors DESCRIPTION TO-66 package collector cur

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