Silicon Power Transistors DESCRIPTION TO-66 package collector sat
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Silicon Power Transistors
DESCRIPTION TO-66 package collector saturation voltage safe operating area APPLICATIONS switching wide-band amplifier applications
PINNING Base Emitter Collector DESCRIPTION
2N6372 2N6373 2N6374
Fig.1 simplified outline (TO-66) symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER 2N6372 VCBO Collector-base voltage 2N6373 2N6374 2N6372 VCEO Collector-emitter voltage 2N6373 2N6374 VEBO Tstg Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 4.37 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N6372 VCEO(SUS) Collector-emitter sustaining voltage 2N6373 2N6374 VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage 2N6372 ICEO Collector cut-off current 2N6373 2N6374 ICBO IEBO Collector cut-off current Emitter cut-off current 2N6372 current gain 2N6373 2N6374 Transition frequency IC=2A; IB=0.2A IC=6A; IB=0.6A IC=2A; IB=0.2A IC=6A; IB=0.6A VCE=80V; IB=0 VCE=60V; IB=0 VCE=40V; IB=0 IC=0.1A ;IB=0
2N6372 2N6373 2N6374
SYMBOL
CONDITIONS
TYP.
UNIT
VCB=Rated VCB; IE=0 VEB=6V; IC=0 IC=2A VCE=2V IC=2.5A VCE=2V IC=3A VCE=2V IC=0.5A;VCE=10V;f=1MHz
Silicon Power Transistors
PACKAGE OUTLINE
2N6372 2N6373 2N6374
Fig.2 outline dimensions
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