Silicon Power Transistors DESCRIPTION TO-3 package collector satu

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Silicon Power Transistors DESCRIPTION TO-3 package collector satu

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Silicon Power Transistors
DESCRIPTION TO-3 package collector saturation voltage dissipation capability safe operating area APPLICATIONS shunt regulators amplifiers circuits
PINNING Base Emitter Collector DESCRIPTION
2N6371
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS
2N6371
SYMBOL
TYP.
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=8A ;IB=0.8A
VCEsat-2
Collector-emitter saturation voltage
IC=16A; IB=4A
Base-emitter voltage
IC=16A VCE=4V
ICEO
Collector cut-off current
VCE=25V; IB=0 VCE=45V;VBE(off)=1.5V VCE=40V;VBE(off)=1.5V;TC=150 VEB=5V; IC=0
10.0
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
current gain
IC=8A VCE=4V
hFE-2
current gain
IC=16A VCE=4V
Transition freuqency
IC=1A VCE=4V
Silicon Power Transistors
PACKAGE OUTLINE
2N6371
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)

Silicon Power Transistors DESCRIPTION TO-3 package collector satu

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