Silicon Power Transistors DESCRIPTION TO-3 package collector satu
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Silicon Power Transistors
DESCRIPTION TO-3 package collector saturation voltage current gain safe operating area APPLICATIONS high power applications switching circuits such relay solenoid drivers, converters inverters.
PINNING Base Emitter Collector DESCRIPTION
2N6359
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 1.17 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdwon voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Emitter cut-off current current gain current gain Transition freuqency CONDITIONS IC=0.2A ;IB=0 IC=8A ;IB=0.8A IC=16A; IB=3.2A IC=8A VCE=4V VCE=80V; IB=0 VCE=100V; VBE(off)=1.5V TC=150 VEB=7V; IC=0 IC=8A VCE=4V IC=16A VCE=4V IC=1A VCE=4V TYP.
2N6359
SYMBOL V(BR)CEO VCEsat-1 VCEsat-2 ICEO ICEX IEBO hFE-1 hFE-2
UNIT
10.0
Silicon Power Transistors
PACKAGE OUTLINE
2N6359
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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