Silicon Power Transistors DESCRIPTION TO-3 package current gain A
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Silicon Power Transistors
DESCRIPTION TO-3 package current gain APPLICATIONS general-purpose amplifier low-frequency switching applications
PINNING Base Emitter Collector DESCRIPTION
2N6356
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 1.09 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS TYP.
2N6356
SYMBOL
UNIT
V(BR)CEO
Collector-emitter breakdwon voltage
IC=0.2A ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=10A ;IB=40mA
VCEsat-2
Collector-emitter saturation voltage
IC=20A ;IB=1A
Base-emitter saturation voltage
IC=20A ;IB=1A
Base-emitter voltage
IC=10A VCE=4V VCE=40V;IB=0
ICEO
Collector cut-off current
ICBO
Collector cut-off current
VCB=50V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
current gain
IC=4A VCE=5V
1500
20000
hFE-2
current gain
IC=20A VCE=5V
Silicon Power Transistors
PACKAGE OUTLINE
2N6356
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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