Silicon Power Transistors DESCRIPTION TO-3 package safe operating
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Silicon Power Transistors
DESCRIPTION TO-3 package safe operating area switching speed collector saturation voltage power dissipation APPLICATIONS switching applications military industrial equipment
PINNING Base Emitter Collector DESCRIPTION
2N6354
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 1.25 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdwon voltage Emitter-base breakdwon voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current current gain current gain Output capacitance CONDITIONS IC=0.2A ;IB=0 IE=5m ;IC=0 IC=5A ;IB=0.5A IC=10A; IB=1A IC=5A ;IB=0.5A IC=10A; IB=1A VCE=100V;VBE=0 TC=125 VCE=140V; IB=0 VCB=150V; IE=0 VEB=5V; IC=0 IC=5A VCE=2V IC=10A VCE=2V IE=0 VCB=10V;f=1MHz TYP.
2N6354
SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 sat-1 sat-2 ICEO ICEV ICBO IEBO hFE-1 hFE-2
UNIT
Silicon Power Transistors
PACKAGE OUTLINE
2N6354
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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