Silicon Power Transistors DESCRIPTION TO-3 package switching time
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Silicon Power Transistors
DESCRIPTION TO-3 package switching times collector saturation voltage type 2N6436~38 APPLICATIONS industrial-military power amplifier switching circuit applications
PINNING(see Fig.2) Base Emitter Collector DESCRIPTION
2N6338 2N6339 2N6340 2N6341
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER 2N6338 VCBO Collector-base voltage 2N6339 2N6340 2N6341 2N6338 VCEO Collector-emitter voltage 2N6339 2N6340 2N6341 VEBO Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 0.875 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N6338 Collector-emitter sustaining voltage 2N6339 SYMBOL
2N6338 2N6339 2N6340 2N6341
CONDITIONS
TYP.
V(SUS)CEO
IC=50mA ;IB=0 2N6340 2N6341 IC=10A; IB=1.0A IC=25A; IB=2.5A IC=10A; IB=1.0A IC=25A; IB=2.5A IC=10A VCE=2V VCE=Rated VCEO; VEB=1.5V TC=150 VCB=Rated VCB; IE=0 2N6338 VCE= 50V,IB=0 VCE= 60V,IB=0 2N6340 2N6341 VCE= 70V,IB=0 VCE= 75V,IB=0 VEB=6V; IC=0 IC=0.5A VCE=2V IC=10A VCE=2V IC=25A VCE=2V IE=0 VCB=10V;f=0.1MHz IC=1A VCE=10V;f=10MHz VCC=80V,IC=10A,IB1=1A ;VBE=1.5V VCC=80V,IC=10A,IB1=IB2=1A 0.25
VCEsat-1 VCEsat-2 sat-1 sat-2 ICEX ICBO
Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current
ICEO
Collector cut-off current
2N6339
IEBO hFE-1 hFE-2 hFE-3
Emitter cut-off current current gain current gain current gain Output capacitance Transition frequency Rise time Storage time Fall times
Silicon Power Transistors
PACKAGE OUTLINE
2N6338 2N6339 2N6340 2N6341
Fig.2 outline dimensions
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