Silicon Power Transistors DESCRIPTION TO-3 package collector satu
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Silicon Power Transistors
DESCRIPTION TO-3 package collector saturation voltage current gain APPLICATIONS audio amplifier switching circuits applications
PINNING Base Emitter Collector DESCRIPTION
2N6326 2N6327 2N6328
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER 2N6326 VCBO Collector-base voltage 2N6327 2N6328 2N6326 VCEO Collector-emitter voltage 2N6327 2N6328 VEBO Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 0.875 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N6326 VCEO(SUS) Collector-emitter sustaining voltage 2N6327 2N6328 VCEsat VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage 2N6326 ICBO Collector cut-off current 2N6327 2N6328 IEBO hFE-1 hFE-2 Emitter cut-off current current gain current gain Transition frequency IC=15A; IB=1.5A IC=15A; IB=1.5A IC=8A VCE=4V VCB=60V; IE=0 TC=150 VCB=80V; IE=0 TC=150 VCB=100V; IE=0 TC=150 VEB=4V; IC=0 IC=8A VCE=4V IC=30A VCE=4V IC=0.2 ;IB=0
2N6326 2N6327 2N6328
SYMBOL
CONDITIONS
TYP.
UNIT
IC=1A VCE=10V;f=1.0MHz
Silicon Power Transistors
PACKAGE OUTLINE
2N6326 2N6327 2N6328
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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