Silicon Power Transistors DESCRIPTION TO-66 package collector sat
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Silicon Power Transistors
DESCRIPTION TO-66 package collector saturation voltage type 2N6315/6316 APPLICATIONS general-purpose power amplifier switching applications
PINNING Base Emitter Collector DESCRIPTION
2N6317 2N6318
Fig.1 simplified outline (TO-66) symbol
Absolute maximum ratings(Ta=
SYMBOL VCBO PARAMETER 2N6317 Collector-base voltage 2N6318 2N6317 VCEO VEBO Tstg Collector-emitter voltage 2N6318 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base -65~200 Open emitter CONDITIONS VALUE UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 1.94 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N6317 IC=-0.1A ;IB=0 2N6318 IC=-4A; IB=-0.4 IC=-7A; IB=-1.75A IC=-7A; IB=-1.75A IC=-2.5A VCE=-4V 2N6317 ICEO Collector cut-off current 2N6318 2N6317 ICBO Collector cut-off current 2N6318 ICEX IEBO hFE-1 hFE-2 hFE-3 Collector cut-off current Emitter cut-off current current gain current gain current gain Transition frequency VCB=-80V; IE=0 VCE=Rated VCE; VBE(off)=1.5V TC=150 VEB=-5V; IC=0 IC=-0.5A VCE=-4V IC=-2.5A VCE=-4V IC=-7A VCE=-4V IC=-0.25A;VCE=-10V;f=1.0MHz VCE=-40V; IB=0 VCB=-60V; IE=0 VCE=-30V; IB=0 CONDITIONS
2N6317 2N6318
SYMBOL
TYP.
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
-1.0 -2.0 -2.5 -1.5
VCEsat-1 VCEsat-2 VBEsat
Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage
-0.5
-0.25
-0.25 -2.0 -1.0
Silicon Power Transistors
PACKAGE OUTLINE
2N6317 2N6318
Fig.2 outline dimensions
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