Silicon Power Transistors DESCRIPTION TO-66 package collector sat

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Silicon Power Transistors DESCRIPTION TO-66 package collector sat

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Silicon Power Transistors
DESCRIPTION TO-66 package collector saturation voltage type 2N6317/6318 APPLICATIONS general-purpose power amplifier switching applications
PINNING Base Emitter Collector DESCRIPTION
2N6315 2N6316
Fig.1 simplified outline (TO-66) symbol
Absolute maximum ratings(Ta=
SYMBOL VCBO PARAMETER 2N6315 Collector-base voltage 2N6316 2N6315 VCEO VEBO Tstg Collector-emitter voltage 2N6316 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base -65~200 Open emitter CONDITIONS VALUE UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 1.94 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N6315 IC=0.1A ;IB=0 2N6316 VCEsat-1 VCEsat-2 VBEsat Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage 2N6315 ICEO Collector cut-off current 2N6316 2N6315 ICBO Collector cut-off current 2N6316 ICEX IEBO hFE-1 hFE-2 hFE-3 Collector cut-off current Emitter cut-off current current gain current gain current gain Transition frequency VCB=80V; IE=0 VCE=Rated VCE; VBE(off)=1.5V TC=150 VEB=5V; IC=0 IC=0.5A VCE=4V IC=2.5A VCE=4V IC=7A VCE=4V IC=0.25A;VCE=10V;f=1.0MHz VCE=40V; IB=0 VCB=60V; IE=0 IC=4A; IB=0.4 IC=7A; IB=1.75A IC=7A; IB=1.75A IC=2.5A VCE=4V VCE=30V; IB=0 CONDITIONS
2N6315 2N6316
SYMBOL
TYP.
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
0.25
0.25
Silicon Power Transistors
PACKAGE OUTLINE
2N6315 2N6316
Fig.2 outline dimensions

Silicon Power Transistors DESCRIPTION TO-66 package collector sat

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