Silicon Power Transistors DESCRIPTION TO-66 package collector sat
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Silicon Power Transistors
DESCRIPTION TO-66 package collector saturation voltage leakage current APPLICATIONS general-purpose power amplifier switching applications
PINNING Base Emitter Collector DESCRIPTION
2N6312 2N6313 2N6314
Fig.1 simplified outline (TO-66) symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER 2N6312 VCBO Collector-base voltage 2N6313 2N6314 2N6312 VCEO Collector-emitter voltage 2N6313 2N6314 VEBO Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 2.32 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N6312 VCEO(SUS) Collector-emitter sustaining voltage 2N6313 2N6314 VCEsat-1 VCEsat-2 VCEsat-3 Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage 2N6312 ICEO Collector cut-off current 2N6313 2N6314 2N6312 ICBO Collector cut-off current 2N6313 2N6314 ICEX IEBO hFE-1 hFE-2 hFE-3 hFE-4 Collector cut-off current Emitter cut-off current current gain current gain current gain current gain Output capacitance Transition frequency IC=-1.5A; IB=-0.15A IC=-3A; IB=-0.3A IC=-5A; IB=-1.25A IC=-1.5A VCE=-2V VCE=-30V; IB=0 VCE=-50V; IB=0 VCE=-70V; IB=0 VCB=-40V; IE=0 VCB=-60V; IE=0 VCB=-80V; IE=0 IC=-0.1A ;IB=0 SYMBOL
2N6312 2N6313 2N6314
CONDITIONS
TYP.
UNIT
-0.7 -2.0 -4.0 -1.4
-1.0
VCE=Rated VCE; VBE(off)=1.5V TC=125 VEB=-5V; IC=0 IC=-0.5A VCE=-2V IC=-1.5A VCE=-2V IC=-3A VCE=-2V IC=-5A VCE=-4V IE=0 VCB=-10V;f=1MHz IC=-0.5A;VCE=-10V;f=1.0MHz
-0.1 -1.0 -0.5
Silicon Power Transistors
PACKAGE OUTLINE
2N6312 2N6313 2N6314
Fig.2 outline dimensions
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