Silicon Power Transistors DESCRIPTION TO-3 package breakdown volt
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Silicon Power Transistors
DESCRIPTION TO-3 package breakdown voltage power dissipation APPLICATIONS high voltage inverters, switching regulators,line operated amplifiers, switching power supplies applications
PINNING (See Fig.2) Base Emitter Collector DESCRIPTION
2N6308
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature Tc=25 CONDITIONS Open emitter Open base Open collector VALUE -65~200 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Emitter cut-off current current gain current gain Output capacitance Transition frequency CONDITIONS IC=0.1A IB=0 IC=3A; IB=0.6A IC=8A; IB=2.67A IC=8A; IB=2.67A IC=3A VCE=5V VCE=700V; VBE=-1.5V VCE=350V; IB=0 VEB=8V; IC=0 IC=3A VCE=5V IC=8A VCE=5V IE=0 VCB=10V;f=1MHz IC=0.3A VCE=10V;f=1MHz
2N6308
SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat ICEV ICEO IEBO hFE-1
TYP.
UNIT
Switching times Rise time Storage time Fall time VCC=125V; IC=3.0A; IB=0.6A
Silicon Power Transistors
PACKAGE OUTLINE
2N6308
Fig.2 Outline dimensions
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