Silicon Power Transistors DESCRIPTION TO-3 package collector satu
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Silicon Power Transistors
DESCRIPTION TO-3 package collector saturation voltage current gain @IC=8A APPLICATIONS high power audio amplifier applications high voltage switching regulator circuits
PINNING (See Fig.2) Base Emitter Collector DESCRIPTION
2N6302
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature Tc=25 CONDITIONS Open emitter Open base Open collector VALUE -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 0.875 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current current gain current gain Transition frequency CONDITIONS IC=0.1A IB=0 IC=10A; IB=1A IC=16A; IB=4A IC=10A; IB=1A IC=8A VCE=4V VCE=140V; VBE=-1.5V TC=150 VCB=140V; IE=0 VCE=70V; IB=0 VEB=7V; IC=0 IC=8A VCE=4V IC=16A VCE=4V IC=1A VCE=10V;f=1MHz
2N6302
SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat ICEV ICBO ICEO IEBO hFE-1
TYP.
UNIT
Silicon Power Transistors
PACKAGE OUTLINE
2N6302
Fig.2 Outline dimensions
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