Silicon Power Transistors DESCRIPTION TO-66 package collector sat

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Silicon Power Transistors DESCRIPTION TO-66 package collector sat

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Silicon Power Transistors
DESCRIPTION TO-66 package collector saturation voltage type 2N6298/6299 APPLICATIONS purpose power amplifier frequency switching applications
PINNING (See Fig.2) Base Emitter Collector DESCRIPTION
2N6300 2N6301
Fig.1 simplified outline (TO-66) symbol
Absolute maximum ratings(Ta=25
SYMBOL VCBO PARAMETER Collector-base voltage 2N6300 2N6301 Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 2N6300 2N6301 Open collector Open base Open emitter CONDITIONS VALUE 0.12 -65~200 UNIT
VCEO VEBO Tstg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance from junction case 2.33 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N6300 IC=0.1A IB=0 2N6301 IC=4A; IB=16mA IC=8A; IB=80mA IC=8A; IB=80mA IC=4A VCE=3V 2N6300 ICEX Collector cut-off current 2N6301 2N6300 ICEO Collector cut-off current 2N6301 IEBO hFE-1 hFE-2 Emitter cut-off current current gain current gain Output capacitance VCE=40V; IB=0 VEB=5V; IC=0 IC=4A VCE=3V IC=8A VCE=3V IE=0 VCB=10V;f=0.1MHz VCE=60V; VBE(off)=1.5V TC=150 VCE=80V; VBE(off)=1.5V TC=150 VCE=30V; IB=0 CONDITIONS
2N6300 2N6301
SYMBOL
TYP.
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
VCEsat-1 VCEsat-2 VBEsat
Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base -emitter voltage
18000
Silicon Power Transistors
PACKAGE OUTLINE
2N6300 2N6301
Fig.2 Outline dimensions

Silicon Power Transistors DESCRIPTION TO-66 package collector sat

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