Silicon Power Transistors DESCRIPTION TO-66 package collector sat
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Silicon Power Transistors
DESCRIPTION TO-66 package collector saturation voltage type 2N6300/6301 APPLICATIONS purpose power amplifier frequency switching applications
PINNING (See Fig.2) Base Emitter Collector DESCRIPTION
2N6298 2N6299
Fig.1 simplified outline (TO-66) symbol
Absolute maximum ratings(Ta=25
SYMBOL VCBO PARAMETER Collector-base voltage 2N6298 2N6299 Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 2N6298 2N6299 Open collector Open base Open emitter CONDITIONS VALUE -0.12 -65~200 UNIT
VCEO VEBO Tstg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance from junction case 2.33 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N6298 IC=-0.1A IB=0 2N6299 VCEsat-1 VCEsat-2 VBEsat Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base -emitter voltage 2N6298 ICEX Collector cut-off current 2N6299 2N6298 ICEO Collector cut-off current 2N6299 IEBO hFE-1 hFE-2 Emitter cut-off current current gain current gain Output capacitance VCE=-40V; IB=0 VEB=-5V; IC=0 IC=-4A VCE=-3V IC=-8A VCE=-3V IE=0 VCB=-10V;f=0.1MHz IC=-4A; IB=-16mA IC=-8A; IB=-80mA IC=-8A; IB=-80mA IC=-4A VCE=-3V VCE=-60V; VBE(off)=-1.5V TC=150 VCE=-80V; VBE(off)=-1.5V TC=150 VCE=-30V; IB=0 CONDITIONS
2N6298 2N6299
SYMBOL
TYP.
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
-2.0 -3.0 -4.0 -2.8 -0.5 -5.0 -0.5 -5.0
-0.5
-2.0 18000
Silicon Power Transistors
PACKAGE OUTLINE
2N6298 2N6299
Fig.2 Outline dimensions
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