Silicon Power Transistors DESCRIPTION TO-66 package breakdown vol
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Silicon Power Transistors
DESCRIPTION TO-66 package breakdown voltage collector saturation voltage APPLICATIONS wide variety medium-to-high power, high-voltage applications shunt regulators amplifiers switching circuits drivers
PINNING (See Fig.2) Base Emitter Collector DESCRIPTION
2N6263 2N6264
Fig.1 simplified outline (TO-66) symbol
Absolute maximum ratings(Ta=25
SYMBOL VCBO PARAMETER Collector-base voltage 2N6263 2N6264 2N6263 2N6264 CONDITIONS Open emitter VALUE 2N6263 2N6264 TC=25 -65~200 UNIT
VCEO VEBO Tstg
Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature
Open base Open collector
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case 2N6263 2N6264 8.75 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N6263 IC=0.1 IB=0 2N6264 2N6263 2N6264 2N6263 Base -emitter voltage 2N6264 2N6263 ICEX Collector cut-off current 2N6264 2N6263 ICEO Collector cut-off current 2N6264 2N6263 IEBO Emitter cut-off current 2N6264 2N6263 hFE-1 current gain 2N6264 2N6263 hFE-2 current gain 2N6264 Transition frequency Second breakdown collector current with base forward biased 2N6263 2N6264 IC=0.2A VCE=4V VCE=120Vdc,t=1.0s, Nonrepetitive IC=3A VCE=2V IC=1A VCE=2V VEB=7V; IC=0 IC=0.5 VCE=4V VCE=130V;IB=0 VEB=5V; IC=0 IC=1.0A VCE=2V VCE=120V; VBE(off)=-1.5V TC=150 VCE=150V; VBE(off)=-1.5V TC=150 VCE=100V;IB=0 IC=0.5A; IB=0.05A IC=1.0A; IB=0.1A IC=0.5A VCE=4V CONDITIONS SYMBOL
2N6263 2N6264
TYP.
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
VCEsat
Collector-emitter saturation voltage
0.05
0.167 0.417
Is/b
Silicon Power Transistors
PACKAGE OUTLINE
2N6263 2N6264
Fig.2 Outline dimensions
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