Silicon Power Transistors DESCRIPTION TO-3 package collector satu
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Silicon Power Transistors
DESCRIPTION TO-3 package collector saturation voltage safe operating area gain high current APPLICATIONS types switching linear-amplifier applications
PINNING Base Emitter Collector DESCRIPTION
2N6246 2N6247 2N6248
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER 2N6246 VCBO Collector-base voltage 2N6247 2N6248 2N6246 VCEO Collector-emitter voltage 2N6247 2N6248 VEBO Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -110 -100 -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N6246 VCEO(SUS) Collector-emitter sustaining voltage 2N6247 2N6248 2N6246 VCEsat-1 Collector-emitter saturation voltage 2N6247 2N6248 2N6246 VCEsat-2 Collector-emitter saturation voltage 2N6247 2N6248 2N6246 Base-emitter voltage 2N6247 2N6248 ICEO Collector cut-off current 2N6246 ICEX Collector cut-off current 2N6247 2N6248 2N6246 IEBO Emitter cut-off current 2N6247 2N6248 2N6246 hFE-1 current gain 2N6247 2N6248 2N6246 hFE-2 current gain 2N6247 2N6248 IC=-7A VCE=-4V IC=-6A VCE=-4V IC=-5A VCE=-4V IC=-15A VCE=-4V IC=-15A VCE=-4V IC=-10A VCE=-4V VEB=-5V; IC=0 IC=-7A; IB=-0.7A IC=-6A; IB=-0.6A IC=-5A; IB=-0.5A IC=-15A; IB=-3A IC=-15A; IB=-4A IC=-0.2A ;IB=0 CONDITIONS SYMBOL
2N6246 2N6247 2N6248
-100
TYP.
UNIT
-1.3
-2.5 -3.5
IC=-10A; IB=-2A IC=-7A VCE=-4V IC=-6A VCE=-4V IC=-5A VCE=-4V VCE=1/2Rated VCEO; IB=0 VCE=-65V; VBE=-1.5V VCE=-55V; VBE=-1.5V TC=150 VCE=-85V; VBE=-1.5V VCE=-70V; VBE=-1.5V TC=150 VCE=-100V; VBE=-1.5V VCE=-90V; VBE=-1.5V TC=150 -2.0 -1.8 -1.8 -1.0 -0.2 -5.0 -0.2 -5.0 -0.2 -5.0 -5.0 -1.0
Silicon Power Transistors
PACKAGE OUTLINE
2N6246 2N6247 2N6248
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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