Silicon Power Transistors DESCRIPTION TO-66 package saturation vo

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Silicon Power Transistors DESCRIPTION TO-66 package saturation vo

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Silicon Power Transistors
DESCRIPTION TO-66 package saturation voltage safe operating area APPLICATIONS switching circuits amplifers drivers shunt-regulator driver output stages
PINNING (See Fig.2) Base Emitter Collector DESCRIPTION
2N6260
Fig.1 simplified outline (TO-66) symbol
Absolute maximum ratings(Ta=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base -emitter voltage Collector cut-off current Collector cut-off current Emitter cut-off current current gain current gain CONDITIONS IC=0.1 IB=0 IC=1.5A; IB=0.15A IC=1.5A VCE=2V VCE=40V;VBE(off)=-1.5V TC=150 VCE=30V; IB=0 VEB=7V; IC=0 IC=4A VCE=2V IC=1.5A VCE=2V
2N6260
SYMBOL VCEO(SUS) VCEsat ICEV ICEO IEBO hFE-1 hFE-2
TYP.
UNIT
Silicon Power Transistors
PACKAGE OUTLINE
2N6260
Fig.2 Outline dimensions

Silicon Power Transistors DESCRIPTION TO-66 package saturation vo

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