Silicon Power Transistors DESCRIPTION TO-3 package collector satu

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Silicon Power Transistors DESCRIPTION TO-3 package collector satu

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Silicon Power Transistors
DESCRIPTION TO-3 package collector saturation voltage safe operating area dissipation capability APPLICATIONS shunt regulators fidelity amplifiers switching circuits
PINNING Base Emitter Collector DESCRIPTION
2N6253
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Emitter cut-off current current gain current gain CONDITIONS IC=0.2A ;IB=0 IC=3A ;IB=0.3A IC=15A ;IB=5A IC=3A VCE=4V VCE=25V; IB=0 VCE=55V; VBE=-1.5V VCE=50V; VBE=-1.5V TC=150 VEB=5V; IC=0 IC=3A VCE=4V IC=15A VCE=4V
2N6253
SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 ICEO ICEX IEBO hFE-1 hFE-2
TYP.
UNIT
10.0
Silicon Power Transistors
PACKAGE OUTLINE
2N6253
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)

Silicon Power Transistors DESCRIPTION TO-3 package collector satu

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