Silicon Power Transistors DESCRIPTION TO-3 package current ;high
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Silicon Power Transistors
DESCRIPTION TO-3 package current ;high dissipation type 2N5883;2N5884 APPLICATIONS intended power linear frequency switching applications
PINNING Base Emitter Collector DESCRIPTION
2N6058 2N6059
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL VCBO PARAMETER Collector-base voltage 2N6058 2N6059 Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 2N6058 2N6059 Open collector Open base CONDITIONS Open emitter VALUE -65~200 UNIT
VCEO VEBO Tstg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 1.17 UNIT
Silicon Power Transistors
2N6058 2N6059
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N6058 IC=0.1A ;IB=0 2N6059 IC=6A ;IB=24mA IC=12A ;IB=120mA IC=12A ;IB=120mA IC=6A VCE=3V 2N6058 ICEO Collector cut-off current 2N6059 IEBO hFE-1 hFE-2 Emitter cut-off current current gain current gain Trainsistion frequency VCE=50V; IB=0 VEB=5V; IC=0 IC=6A VCE=3V IC=12A VCE=3V IC=5A ;VCE=3V;f=1MHz VCE=40V; IB=0 CONDITIONS TYP. UNIT
SYMBOL
VCEO(SUS)
Collector-emitter sustaining voltage
VCEsat-1 VCEsat-2 VBEsat
Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage
Silicon Power Transistors
PACKAGE OUTLINE
2N6058 2N6059
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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