Silicon Power Transistors DESCRIPTION TO-3 package collector satu

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Silicon Power Transistors DESCRIPTION TO-3 package collector satu

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Silicon Power Transistors
DESCRIPTION TO-3 package collector saturation voltage type 2N6053;2N6054 APPLICATIONS power amplifier frequency swithing applications
PINNING Base Emitter Collector DESCRIPTION
2N6055 2N6056
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL VCBO PARAMETER Collector-base voltage 2N6055 2N6056 2N6055 2N6056 CONDITIONS Open emitter VALUE TC=25 -65~200 UNIT
VCEO VEBO Tstg
Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature
Open base Open collector
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 1.75 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tm=25 unless otherwise specified PARAMETER 2N6055 IC=0.1 ;IB=0 2N6056 IC=4A ;IB=16mA IC=8A ;IB=80mA IC=8A ;IB=80mA IC=4A VCE=3V 2N6055 ICEO Collector cut-off current 2N6056 2N6055 ICEX Collector cut-off current 2N6056 IEBO hFE-1 hFE-2 Emitter cut-off current current gain current gain Output capacitance VCE=40V; IB=0 VCE=60V; VBE(off)=1.5V TC=150 VCE=80V; VBE(off)=1.5V TC=150 VEB=5V; IC=0 IC=4A VCE=3V IC=8A VCE=3V IE=0;VCB=10V;f=0.1MHz VCE=30V; IB=0 CONDITIONS SYMBOL
2N6055 2N6056
TYP.
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
VCEsat-1 VCEsat-2 VBEsat
Collector-emitter saturation voltge Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage
18000
Silicon Power Transistors
PACKAGE OUTLINE
2N6055 2N6056
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)

Silicon Power Transistors DESCRIPTION TO-3 package collector satu

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