Silicon Power Transistors DESCRIPTION TO-3 package collector satu

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Silicon Power Transistors DESCRIPTION TO-3 package collector satu

Datasheet Thumbnail

Top Searches for this datasheet

Silicon Power Transistors
DESCRIPTION TO-3 package collector saturation voltage type 2N6055;2N6056 APPLICATIONS power amplifier frequency swithing applications PINNING (See Fig.2)
Base Emitter Collector DESCRIPTION
2N6053 2N6054
Fig.1 simplified outline (TO-3) symbol
ABSOLUTE MAXIMUM RATINGS(TC=25
SYMBOL VCBO PARAMETER Collector-base voltage 2N6053 2N6054 2N6053 2N6054 CONDITIONS Open emitter VALUE -120 TC=25 -65~200 UNIT
VCEO VEBO Tstg
Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature
Open base Open collector
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 1.75 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tm=25 unless otherwise specified PARAMETER 2N6053 IC=-0.1 ;IB=0 2N6054 IC=-4A ;IB=-16mA IC=-8A ;IB=-80mA IC=-8A ;IB=-80mA IC=-4A VCE=-3V 2N6053 ICEO Collector cut-off current 2N6054 2N6053 ICEX Collector cut-off current 2N6054 IEBO hFE-1 hFE-2 Emitter cut-off current current gain current gain Output capacitance VCE=-40V; IB=0 VCE=-60V; VBE(off)=-1.5V TC=150 VCE=-80V; VBE(off)=-1.5V TC=150 VEB=-5V; IC=0 IC=-4A VCE=-3V IC=-8A VCE=-3V IE=0;VCB=-10V;f=0.1MHz VCE=-30V; IB=0 CONDITIONS SYMBOL
2N6053 2N6054
TYP.
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
-2.0 -3.0 -4.0 -2.8
VCE(sat)-1 VCE(sat)-2 VBE(sat)
Collector-emitter saturation voltge Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage
-0.5
-0.5 -5.0 -0.5 -5.0 -2.0 18000
Silicon Power Transistors
PACKAGE OUTLINE
2N6053 2N6054
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)

Silicon Power Transistors DESCRIPTION TO-3 package collector satu

Top Searches for this datasheet

Other recent searches