Silicon Power Transistors DESCRIPTION TO-3 package type 2N5631 co
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Silicon Power Transistors
DESCRIPTION TO-3 package type 2N5631 collector sustaining voltage current gain collector saturation voltage APPLICATIONS high power audio amplifier high voltage switching regulator circuits applications
PINNING Base Emitter Collector DESCRIPTION
2N6031
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -140 -140 -5.0 -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 0.875 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current CONDITIONS IC=-0.2A ;IB=0 IC=-10A; IB=-1A IC=-16A ;IB=-4A IC=-10A; IB=-1A IC=-8A VCE=-2V VCB=ratedVCBO; IE=0 VCE=-70V; IB=0 VCE=ratedVCB VCE=ratedVCB; TC=150 IEBO hFE-1 hFE-2 Emitter cut-off current current gain current gain Output capacitance Transition frequency VEB=-7V; IC=0 IC=-8A VCE=-2V IC=-16A VCE=-2V IE=0 VCB=-10V ;f=0.1MHz IC=-1A VCE=-20V ;f=0.5MHz -140 TYP.
2N6031
SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat ICBO ICEO
UNIT
-1.0 -2.0 -1.8 -1.5 -2.0 -2.0 -2.0
ICEX
Collector cut-off current (VBE(off)=1.5V)
-7.0 -5.0
1000
Silicon Power Transistors
PACKAGE OUTLINE
2N6031
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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