Silicon Power Transistors DESCRIPTION TO-3 package type 2N5629 2N
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Silicon Power Transistors
DESCRIPTION TO-3 package type 2N5629 2N5630 power dissipations APPLICATIONS high voltage high power amplifier applications
PINNING Base Emitter Collector DESCRIPTION
2N6029 2N6030
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL VCBO PARAMETER 2N6029 Collector-base voltage 2N6030 2N6029 VCEO VEBO Tstg Collector-emitter voltage 2N6030 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base -120 -5.0 -65~200 Open emitter -120 -100 CONDITIONS VALUE -100 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 0.875 UNIT
Silicon Power Transistors
2N6029 2N6030
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N6029 IC=-0.2A ;IB=0 2N6030 IC=-10A; IB=-1A IC=-16A ;IB=-4A IC=-10A; IB=-1A IC=-8A VCE=-2V VCB=ratedVCBO; IE=0 2N6029 ICEO Collector cut-off current 2N6030 VCE=-60V; IB=0 VCE=ratedVCB VCE=ratedVCB; TC=150 VEB=-7V; IC=0 2N6029 hFE-1 current gain 2N6030 hFE-2 current gain Output capacitance Transition frequency IC=-16A VCE=-2V IE=0 VCB=-10V ;f=0.1MHz IC=-1A VCE=-20V;f=0.5MHz IC=-8A VCE=-2V 1000 -1.0 -5.0 -1.0 VCE=-50V; IB=0 -1.0 -120 -1.0 -2.0 -1.8 -1.5 -1.0 CONDITIONS -100 TYP. UNIT SYMBOL
VCEO(SUS)
Collector-emitter sustaining voltage
VCEsat-1 VCEsat-2 VBEsat ICBO
Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Collector cut-off current
ICEV
Collector cut-off current (VBE(off)=1.5V)
IEBO
Emitter cut-off current
Silicon Power Transistors
PACKAGE OUTLINE
2N6029 2N6030
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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