Silicon Power Transistors DESCRIPTION TO-66 package collector sat
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Silicon Power Transistors
DESCRIPTION TO-66 package collector saturation voltage safe operating area type 2N6372/6373/6374 APPLICATIONS driver circuits,switching amplifier applications
PINNING Base Emitter Collector DESCRIPTION
2N5954 2N5955 2N5956
Fig.1 simplified outline (TO-66) symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER 2N5954 VCBO Collector-base voltage 2N5955 2N5956 2N5954 VCEO Collector-emitter voltage 2N5955 2N5956 VEBO Tstg Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N5954 VCEO(SUS) Collector-emitter sustaining voltage 2N5955 2N5956 2N5954 VCEsat Collector-emitter saturation voltage 2N5955 2N5956 2N5954 VBE-1 Base-emitter voltage 2N5955 2N5956 VBE-2 Base-emitter voltage 2N5954 ICEO Collector cut-off current 2N5955 2N5956 ICEV IEBO Collector cut-off current(RBE=100@) Emitter cut-off current 2N5954 hFE-1 current gain 2N5955 2N5956 hFE-2 current gain Transition frequency IC=-2A; IB=-0.2A IC=-2.5A; IB=-0.25A IC=-3A; IB=-0.3A IC=-2A VCE=-4V IC=-2.5A VCE=-4V IC=-3A VCE=-4V IC=-6A VCE=-4V VCE=-65V; IB=0 VCE=-45V; IB=0 VCE=-25V; IB=0 IC=-0.1A ;IB=0 SYMBOL
2N5954 2N5955 2N5956
CONDITIONS
TYP.
UNIT
-1.0
-2.0
-3.0
-1.0
VCE=Rated VCE; VBE(off)=1.5V TC=150 VEB=-5V; IC=0 IC=-2A VCE=-4V IC=-2.5A VCE=-4V IC=-3A VCE=-4V IC=-6A VCE=-4V IC=-1A;VCE=-4V;f=1.0MHz
-0.1 -2.0 -0.1
Silicon Power Transistors
PACKAGE OUTLINE
2N5954 2N5955 2N5956
Fig.2 outline dimensions
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