Silicon Power Transistors KSD2058 DESCRIPTION TO-220F packag
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Silicon Power Transistors
KSD2058
DESCRIPTION TO-220F package type KSB1366 APPLICATIONS general purpose applications
PINNING Base Collector Emitter Fig.1 simplified outline (TO-220F) symbol DESCRIPTION
Absolute maximum ratings (Ta=25
SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 Collector dissipation TC=25 Tstg Junction temperature Storage temperature -55~150 CONDITIONS Open emitter Open base Open collector UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=2A ;IB=0.2A IC=0.5A;VCE=5V VCB=60V; IE=0 VEB=7V; IC=0 IC=0.5A VCE=5V IC=0.5A VCE=5V f=1MHz;VCB=10V SYMBOL V(BR)CEO VCEsat ICBO IEBO
KSD2058
TYP.
UNIT
Switching times Turn-on time Storage time Fall time IC=2.0A IB1=-IB2=0.2A VCC=30V ,RL=15@ 0.65 0.65
Classifications 60-120 100-200 150-300
Silicon Power Transistors
PACKAGE OUTLINE
KSD2058
Fig.2 Outline dimensions
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