Silicon Power Transistors KSA1614 DESCRIPTION TO-220F packag
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Silicon Power Transistors
KSA1614
DESCRIPTION TO-220F package voltage: VCBO=-80V dissipation: PC=20W(TC=25 APPLICATIONS regulator frequency power amplifier
PINNING Base Collector Emitter Fig.1 simplified outline (TO-220F) symbol DESCRIPTION
Absolute maximum ratings (Ta=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -55~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current current gain CONDITIONS IC=-10mA IB=0 IC=-500µA IE=0 IE=-500µA IC=0 IC=-1A ;IB=-0.1A VCB=-50V; IE=0 IC=-0.5A VCE=-5V SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO
KSA1614
TYP.
UNIT
-0.15
-0.5
Classifications 40-80 70-140 120-240
Silicon Power Transistors
PACKAGE OUTLINE
KSA1614
Fig.2 Outline dimensions
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