Silicon Power Transistors KSA614 DESCRIPTION TO-220 package
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Silicon Power Transistors
KSA614
DESCRIPTION TO-220 package Voltage:VCBO=-80V(Min) dissipation:PC=25W@TC=25 APPLICATIONS frequency power amplifier regulator
PINNING DESCRIPTION Emitter Collector;connected mounting base Base
Absolute maximum ratings (Ta=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -55~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain CONDITIONS IC=-10mA ;IB=0 IC=-0.5mA ;IE=0 IE=-0.5mA ;IC=0 IC=-1A ;IB=-0.1A VCB=-50V;IE=0 VEB=-5V;IC=0 IC=-0.5A VCE=-5V
KSA614
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO
TYP.
UNIT
-0.5
classifications 40-80 70-140 120-240
Silicon Power Transistors
PACKAGE OUTLINE
KSA614
Fig.2 outline dimensions (unindicated tolerance:±0.10
Silicon Power Transistors
KSA614
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