Silicon Power Transistors DESCRIPTION TO-3 package collector satu
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Silicon Power Transistors
DESCRIPTION TO-3 package collector saturation voltage type 2N5879 2N5880 APPLICATIONS general-purpose power amplifier switching applications
PINNING Base Emitter Collector DESCRIPTION
2N5881 2N5882
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL VCBO PARAMETER 2N5881 Collector-base voltage 2N5882 2N5881 VCEO VEBO Tstg Collector-emitter voltage 2N5882 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base -65~200 Open emitter CONDITIONS VALUE UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE UNIT
Silicon Power Transistors
2N5881 2N5882
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N5881 IC=0.2A ;IB=0 2N5882 IC=7A;IB=0.7A IC=15A;IB=3.75A IC=15A;IB=3.75A IC=6A VCE=4V VCB=ratedVCBO; IB=0 2N5881 ICEO Collector cut-off current 2N5882 ICEX IEBO hFE-1 hFE-2 hFE-3 Collector cut-off current Emitter cut-off current current gain current gain current gain Trainsistion frequency VCE=40V; IB=0 VCE=ratedVCE; VBE=1.5V TC=150 VEB=5V; IC=0 IC=2A VCE=4V IC=6A VCE=4V IC=15A VCE=4V IC=1A VCE=10V VCE=30V; IB=0 CONDITIONS TYP. UNIT SYMBOL
VCEO(SUS)
Collector-emitter sustaining voltage
VCEsat-1 VCEsat-2 VBEsat ICBO
Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Collector cut-off current
Silicon Power Transistors
PACKAGE OUTLINE
2N5881 2N5882
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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