Silicon Power Transistors DESCRIPTION TO-3 package collector satu
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Silicon Power Transistors
DESCRIPTION TO-3 package collector saturation voltage type 2N5875 2N5876 APPLICATIONS general-purpose power amplifier switching applications
PINNING Base Emitter Collector DESCRIPTION
2N5877 2N5878
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL VCBO PARAMETER 2N5877 Collector-base voltage 2N5878 2N5877 VCEO VEBO Tstg Collector-emitter voltage 2N5878 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base -65~200 Open emitter CONDITIONS VALUE UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 1.17 UNIT
Silicon Power Transistors
2N5877 2N5878
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N5877 IC=0.2A ;IB=0 2N5878 IC=5A;IB=0.5A IC=10A;IB=2.5A IC=10A;IB=2.5A IC=4A VCE=4V VCB=ratedVCBO; IB=0 2N5877 2N5878 VCE=30V; IB=0 VCE=40V; IB=0 VCE=ratedVCE; VBE=1.5V TC=150 VEB=5V; IC=0 IC=1A VCE=4V IC=4A VCE=4V IC=10A VCE=4V IC=0.5A VCE=10V;f=1MHz CONDITIONS TYP. UNIT
SYMBOL
VCEO(SUS)
Collector-emitter sustaining voltage
VCEsat-1 VCEsat-2 VBEsat ICBO
Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Collector cut-off current
ICEO
Collector cut-off current
ICEX IEBO hFE-1 hFE-2 hFE-3
Collector cut-off current Emitter cut-off current current gain current gain current gain Trainsistion frequency
Silicon Power Transistors
PACKAGE OUTLINE
2N5877 2N5878
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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