Silicon Power Transistors DESCRIPTION TO-3 package collector satu
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Silicon Power Transistors
DESCRIPTION TO-3 package collector saturation voltage type 2N5877 2N5878 APPLICATIONS general-purpose power amplifier switching applications
PINNING Base Emitter Collector DESCRIPTION
2N5875 2N5876
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL VCBO PARAMETER 2N5875 Collector-base voltage 2N5876 2N5875 VCEO VEBO Tstg Collector-emitter voltage 2N5876 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base -65~200 Open emitter CONDITIONS VALUE UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 1.17 UNIT
Silicon Power Transistors
2N5875 2N5876
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N5875 IC=-0.2A ;IB=0 2N5876 IC=-5A;IB=-0.5A IC=-10A;IB=-2.5A IC=-10A;IB=-2.5A IC=-4A VCE=-4V VCB=ratedVCBO; IB=0 2N5875 ICEO Collector cut-off current 2N5876 ICEX IEBO hFE-1 hFE-2 hFE-3 Collector cut-off current Emitter cut-off current current gain current gain current gain Trainsistion frequency VCE=-40V; IB=0 VCE=ratedVCE; VBE=1.5V TC=150 VEB=-5V; IC=0 IC=-1A VCE=-4V IC=-4A VCE=-4V IC=-10A VCE=-4V IC=-0.5A VCE=-10V;f=1MHz -0.5 -5.0 -1.0 VCE=-30V; IB=0 -1.0 -1.0 -3.0 -2.5 -1.5 -0.5 CONDITIONS TYP. UNIT SYMBOL
VCEO(SUS)
Collector-emitter sustaining voltage
VCEsat-1 VCEsat-2 VBEsat ICBO
Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Collector cut-off current
Silicon Power Transistors
PACKAGE OUTLINE
2N5875 2N5876
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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