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Silicon Power Transistors DESCRIPTION TO-220Fa package type 2SD12


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Silicon Power Transistors
DESCRIPTION TO-220Fa package type 2SD1271 saturation voltage linearity current APPLICATIONS power switching applications
PINNING DESCRIPTION Emitter Collector Base
2SB946
Absolute maximum ratings(Ta=25
SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak TC=25 Collector power dissipation Ta=25 Tstg Junction temperature Storage temperature -55~150 Open emitter Open base Open collector CONDITIONS VALUE -130 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain current gain Transition frequency CONDITIONS IC=-10mA IB=0 IC=-5A; IB=-0.25A IC=-5A; IB=-0.25A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-0.1A VCE=-2V IC=-3A VCE=-2V IC=-0.5A VCE=-10V
2SB946
SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2
TYP.
UNIT
-0.5 -1.5
Switching times Turn-on time Storage time Fall time IC=-3A ;IB1=-0.3A IB2=0.3A
hFE-2 Classifications 60-120 90-180 130-260
Silicon Power Transistors
PACKAGE OUTLINE
2SB946
Fig.2 Outline dimensions (unindicated tolerance:±0.15
Silicon Power Transistors
2SB946

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