| The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers. |
Silicon Power Transistors DESCRIPTION TO-220Fa package type 2SD12
Top Searches for this datasheetSilicon Power Transistors DESCRIPTION TO-220Fa package type 2SD1271 saturation voltage linearity current APPLICATIONS power switching applications PINNING DESCRIPTION Emitter Collector Base 2SB946 Absolute maximum ratings(Ta=25 SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak TC=25 Collector power dissipation Ta=25 Tstg Junction temperature Storage temperature -55~150 Open emitter Open base Open collector CONDITIONS VALUE -130 UNIT Silicon Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain current gain Transition frequency CONDITIONS IC=-10mA IB=0 IC=-5A; IB=-0.25A IC=-5A; IB=-0.25A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-0.1A VCE=-2V IC=-3A VCE=-2V IC=-0.5A VCE=-10V 2SB946 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP. UNIT -0.5 -1.5 Switching times Turn-on time Storage time Fall time IC=-3A ;IB1=-0.3A IB2=0.3A hFE-2 Classifications 60-120 90-180 130-260 Silicon Power Transistors PACKAGE OUTLINE 2SB946 Fig.2 Outline dimensions (unindicated tolerance:±0.15 Silicon Power Transistors 2SB946 Other recent searchesuPD789479 - uPD789479 uPD789479 Datasheet TIP110 - TIP110 TIP110 Datasheet TIP111 - TIP111 TIP111 Datasheet TIP112 - TIP112 TIP112 Datasheet TIP115 - TIP115 TIP115 Datasheet TIP116 - TIP116 TIP116 Datasheet TIP117 - TIP117 TIP117 Datasheet STS-12 - STS-12 STS-12 Datasheet STS-48 - STS-48 STS-48 Datasheet MLC510A - MLC510A MLC510A Datasheet BB221 - BB221 BB221 Datasheet BB222 - BB222 BB222 Datasheet 2SA1313 - 2SA1313 2SA1313 Datasheet
Privacy Policy | Disclaimer |