Silicon Power Transistors DESCRIPTION TO-3 package breakdown volt
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Silicon Power Transistors
DESCRIPTION TO-3 package breakdown voltage APPLICATIONS regulator relay drivers controls
PINNING Base Emitter Collector DESCRIPTION
2N5804 2N5805
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL VCBO PARAMETER 2N5804 Collector-base voltage 2N5805 2N5804 VCEO VEBO Tstg Collector-emitter voltage 2N5805 Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base -65~200 Open emitter CONDITIONS VALUE UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 1.25 UNIT
Silicon Power Transistors
2N5804 2N5805
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N5804 VCEO(SUS) Collector-emitter sustaining voltage 2N5805 VCEsat VBEsat ICEO Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current 2N5804 ICEV Collector cut-off current 2N5805 IEBO Emitter cut-off current current gain Trainsistion frequency VEB=7V; IC=0 IC=5A VCE=4V IC=1A VCE=10V VCE=RatedVCE; VBE(off)=1.5V IC=5A; IB=1A IC=5A ;IB=1A VCE=RatedVCE; IB=0 IC=0.1A ;IB=0 CONDITIONS TYP. UNIT
SYMBOL
Silicon Power Transistors
PACKAGE OUTLINE
2N5804 2N5805
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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