Silicon Power Transistors DESCRIPTION TO-3 package collector satu
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Silicon Power Transistors
DESCRIPTION TO-3 package collector saturation voltage safe operating area APPLICATIONS high power audio amplifier applications high voltage switching regulator circuits
PINNING Base Emitter Collector DESCRIPTION
2N5758 2N5759 2N5760
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER 2N5758 VCBO Collector-base voltage 2N5759 2N5760 2N5758 VCEO Collector-emitter voltage 2N5759 2N5760 VEBO Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 1.17 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N5758 VCEO(SUS) Collector-emitter sustaining voltage 2N5759 2N5760 VCEsat-1 VCEsat-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage 2N5758 ICEO Collector cut-off current 2N5759 2N5760 ICEX ICBO IEBO Collector cut-off current Collector cut-off current Emitter cut-off current 2N5758 hFE-1 current gain 2N5759 2N5760 hFE-2 current gain Output capacitance Transition frequency IC=6A VCE=2V IC=3A VCE=2V IC=3A; IB=0.3A IC=6A ;IB=1.2A IC=3A VCE=2V VCE=50V; IB=0 VCE=60V; IB=0 VCE=70V; IB=0 IC=0.2A ;IB=0 SYMBOL
2N5758 2N5759 2N5760
CONDITIONS
TYP.
UNIT
VCE=ratedVCB; VBE(off)=1.5V TC=150 VCE=ratedVCB; IB=0 VEB=7V; IC=0
IE=0 VCB=10V;f=0.1MHz IC=0.5A VCE=20V
Silicon Power Transistors
PACKAGE OUTLINE
2N5758 2N5759 2N5760
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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