Silicon Power Transistors KTC3229 DESCRIPTION TO-220F packag
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Silicon Power Transistors
KTC3229
DESCRIPTION TO-220F package voltage :VCEO=300V APPLICATIONS color chroma output application
PINNING Base Collector Emitter Fig.1 simplified outline (TO-220F) symbol DESCRIPTION
Absolute maximum ratings(Ta=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature Ta=25 CONDITIONS Open emitter Open base Open collector VALUE -55~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA; IB=1mA VCB=240V; IE=0 VEB=5V; IC=0 IC=0.5mA VCE=10V IC=20mA VCE=10V IC=20mA VCE=20V f=1MHz;VCB=20V
KTC3229
SYMBOL VCEsat ICBO IEBO hFE-1 hFE-2
TYP.
UNIT
Silicon Power Transistors
PACKAGE OUTLINE
KTC3229
Fig.2 Outline dimensions (unindicated tolerance:±0.10
Silicon Power Transistors
KTC3229
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