Silicon Power Transistors KSC5027 DESCRIPTION With TO-220C p
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Silicon Power Transistors
KSC5027
DESCRIPTION With TO-220C package voltage high reliability speed switching area safe operation
PINNING Base Collector;connected mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1100 -55~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain current gain Transition frequency Collector output capacitance CONDITIONS IC=5mA ;IB=0 IC=1mA; IE=0 IE=1mA;IC=0 IC=1.5A ;IB=0.3A IC=1.5A ;IB=0.3A VCB=800V ;IE=0 VEB=5V; IC=0 IC=0.2A VCE=5V IC=1A VCE=5V IC=0.2A VCE=10V f=1MHz VCB=10V 1100 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2
KSC5027
TYP.
UNIT
Switching times Turn-on time Storage time Fall time IC=5 IB1=-2.5IB2=2A VCC=400V RL=200@
hFE-1 Classifications 10-20 15-30 20-40
Silicon Power Transistors
PACKAGE OUTLINE
KSC5027
Fig.2 Outline dimensions (unindicated tolerance:±0.10
Silicon Power Transistors
KSC5027
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