Silicon Power Transistors DESCRIPTION TO-66 package breakdown vol
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Silicon Power Transistors
DESCRIPTION TO-66 package breakdown voltage APPLICATIONS speed switching linear amplifier operational amplifiers regulators ,converters stages high fidelity amplifers
PINNING (See Fig.2) Base Emitter Collector DESCRIPTION
2N5664 2N5665
Fig.1 simplified outline (TO-66) symbol
Absolute maximum ratings(Ta=25
SYMBOL VCBO PARAMETER 2N5664 Collector-base voltage 2N5665 2N5664 VCEO VEBO Tstg Collector-emitter voltage 2N5665 Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 52.5 -65~200 Open emitter CONDITIONS VALUE UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage 2N5664 IC=10mA IB=0 2N5665 IE=10µA IC=0 IC=3A; IB=0.3A CONDITIONS SYMBOL
2N5664 2N5665
TYP.
UNIT
V(BR)CEO
V(BR)EBO
Emitter-base breakdown voltage Collector-emitter saturation voltage 2N5664 2N5665
VCEsat-1
IC=3A; IB=0.6A IC=5A; IB=1A IC=3A; IB=0.3A 2N5665 IC=3A; IB=0.6A IC=5A; IB=1A VCE=200V;VBE(off)=1.5V 2N5665 2N5664 VCE=300V;VBE(off)=1.5V VCB=250V; IE=0 2N5665 2N5664 VCB=400V; IE=0 IC=0.5A VCE=2V 2N5665 2N5664 IC=1A VCE=5V 2N5665 2N5664 IC=3A VCE=5V 2N5665 IC=5A VCE=5V IE=0 VCB=10V;f=1MHz VCC=30V;IC=1A;IB1=-IB2=30mA 2N5664 0.25 VCC=30V;IC=1A;IB1=-IB2=50mA 2N5665
VCEsat-2
Collector-emitter saturation voltage Base-emitter saturation voltage 2N5664
VBEsat-1
VBEsat-2
Base-emitter saturation voltage 2N5664
ICES
Collector cut-off current
ICBO
Collector cut-off current
hFE-1
current gain
hFE-2
current gain
hFE-3
current gain
hFE-4
current gain Output capacitance Turn-on time
toff
Turn-off time
Silicon Power Transistors
PACKAGE OUTLINE
2N5664 2N5665
Fig.2 Outline dimensions
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